Abstract:
Tungsten thin film was sputter deposited on a single crystalline
6H-SiC substrate and annealed in vacuum, hydrogen and argon
atmospheres at a temperature of 800 °C for 1 hour (h). The resulting
atomic distribution and surface morphology were investigated by
Rutherford backscattering spectrometry together with RUMP
simulation and atomic force microscopy analysis techniques. The asdeposited
was composed of W, O, Si and C atoms. The surface
roughness of the As-deposited was about 0.4 nm with the kurtosis of
about 2.44 nm indicated that the surface was relatively flat. The
RUMP simulation results showed that after annealing at 800 °C, the
vacuum and H2 annealed samples had two layers, while the Ar
annealed samples had four layers. The formation of new layer(s) was
a result of intermixing between W and SiC. AFM results indicated
that Ar annealed samples had high surface roughness with large
crystals than the vacuum and H2 annealed samples
