CVD growth of ZrC layers at different temperatures.

Alawad, BAB; Biira, Saphina; Bissett, H; Nel, J. T; Hlatshwayo, T. T; Crouse, P. L; Malherbe, J. B

dc.contributor.author	Alawad, BAB
dc.contributor.author	Biira, Saphina
dc.contributor.author	Bissett, H
dc.contributor.author	Nel, J. T
dc.contributor.author	Hlatshwayo, T. T
dc.contributor.author	Crouse, P. L
dc.contributor.author	Malherbe, J. B
dc.date.accessioned	2021-09-16T11:31:53Z
dc.date.available	2021-09-16T11:31:53Z
dc.date.issued	2016
dc.identifier.citation	Alawad, B.A.B . . . [et al.] (2016). “CVD Growth of ZrC Layers at Different Temperatures.” Physics and Materials Chemistry, vol. 4, no. 1 (2016) 6-9. doi: 10.12691/pmc-4-1-2.	en_US
dc.identifier.uri	http://hdl.handle.net/20.500.12283/789
dc.description	Article	en_US
dc.description.abstract	Zirconium carbide (ZrC) layers were grown on a graphite substrate by chemical vapour deposition (CVD) at 1250°C, 1300°C and 1350°C. Zirconium tetrachloride (ZrCl4), methane (CH4), hydrogen (H2) and argon (Ar) were used as precursors. The deposited ZrC layers were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XDR showed ZrC characteristic peaks with free carbon. Free carbon incorporated in the ZrC layer increased with deposition temperature. The average of grain size also increased with deposition temperature. The latter findings were confirmed by SEM results. Keywords: chemical vapour deposition (CVD), ZrC, XRD, SEM	en_US
dc.description.sponsorship	Busitema University, University of Pretoria.	en_US
dc.language.iso	en	en_US
dc.publisher	Busitema University ; SciEP	en_US
dc.subject	Chemical vapour deposition	en_US
dc.subject	ZrC	en_US
dc.subject	XRD	en_US
dc.subject	SEM	en_US
dc.title	CVD growth of ZrC layers at different temperatures.	en_US
dc.type	Article	en_US