CVD growth of ZrC layers at different temperatures.
| dc.contributor.author | Alawad, BAB | |
| dc.contributor.author | Biira, Saphina | |
| dc.contributor.author | Bissett, H | |
| dc.contributor.author | Nel, J. T | |
| dc.contributor.author | Hlatshwayo, T. T | |
| dc.contributor.author | Crouse, P. L | |
| dc.contributor.author | Malherbe, J. B | |
| dc.date.accessioned | 2021-09-16T11:31:53Z | |
| dc.date.available | 2021-09-16T11:31:53Z | |
| dc.date.issued | 2016 | |
| dc.description | Article | en_US |
| dc.description.abstract | Zirconium carbide (ZrC) layers were grown on a graphite substrate by chemical vapour deposition (CVD) at 1250°C, 1300°C and 1350°C. Zirconium tetrachloride (ZrCl4), methane (CH4), hydrogen (H2) and argon (Ar) were used as precursors. The deposited ZrC layers were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XDR showed ZrC characteristic peaks with free carbon. Free carbon incorporated in the ZrC layer increased with deposition temperature. The average of grain size also increased with deposition temperature. The latter findings were confirmed by SEM results. Keywords: chemical vapour deposition (CVD), ZrC, XRD, SEM | en_US |
| dc.description.sponsorship | Busitema University, University of Pretoria. | en_US |
| dc.identifier.citation | Alawad, B.A.B . . . [et al.] (2016). “CVD Growth of ZrC Layers at Different Temperatures.” Physics and Materials Chemistry, vol. 4, no. 1 (2016) 6-9. doi: 10.12691/pmc-4-1-2. | en_US |
| dc.identifier.uri | https://doi.org/10.60682/dk85-mc22 | |
| dc.language.iso | en | en_US |
| dc.publisher | Busitema University ; SciEP | en_US |
| dc.subject | Chemical vapour deposition | en_US |
| dc.subject | ZrC | en_US |
| dc.subject | XRD | en_US |
| dc.subject | SEM | en_US |
| dc.title | CVD growth of ZrC layers at different temperatures. | en_US |
| dc.type | Article | en_US |